FIELD-EFFECT TRANSISTOR HAVING PERPENDICULAR ELECTRODE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor having a perpendicular electrode and a manufacturing method thereof.

SOLUTION: A planar memory device and vertically oriented thin body devices are formed on a common semiconductor layer in a semiconductor device and a manufacturing method of the semiconductor device. For example, it is desirable that a memory device has a planar transistor in a surrounding region around the device and the vertically oriented thin body transistors in the cell region of the device. This allows the merits in each form of the device to be applied to each suitable function of the memory device.

COPYRIGHT: (C)2007,JPO&INPIT