| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having the structure electrically separating a well region from a semiconductor substrate, and optimum for electrically connecting a well layer embedded into the semiconductor substrate to the outside, and also to provide a manufacturing method for the semiconductor device. <P>SOLUTION: The semiconductor device has: the second conductivity type semiconductor substrate 11 having a first conductivity type impurity layer 12 on the inside; and a transistor 14 being formed in the specified region of the semiconductor substrate 11 and having a first electrode, a second electrode and a control electrode. The semiconductor device further has: a first conductivity type impurity diffusion layer 15 formed in the semiconductor substrate 11 along the wall surface of a trench reaching the impurity layer 12, while surrounding the transistor 14 and brought into contact with the first conductivity type impurity layer 12; and a contact layer 18 formed on the impurity diffusion layer 15. <P>COPYRIGHT: (C)2007,JPO&INPIT |
