发明名称 SEMICONDUCTOR DEVICE USING MEMS TECHNOLOGY
摘要 <P>PROBLEM TO BE SOLVED: To improve performance of a MEMS part, and to reduce manufacturing cost. <P>SOLUTION: This semiconductor device using a MEMS technique on an example of this invention, has a cavity, a lower electrode 13 positioned in a lower part of the cavity, actuators 17, 18 and 19 positioned in an upper part of the cavity, an upper electrode 22 joined to the actuators 17, 18 and 19, and a conductive layer 24 for contacting with the lower electrode 13 via a contact hole having a bottom surface positioned above an upper surface of the lower electrode 13 in the cavity on the outside of the cavity. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006289520(A) 申请公布日期 2006.10.26
申请号 JP20050109977 申请日期 2005.04.06
申请人 TOSHIBA CORP 发明人 OGURO TATSUYA
分类号 B81B3/00;B81C1/00;H01L41/08;H01L41/09;H01L41/187;H01L41/193;H02N1/00;H02N2/00 主分类号 B81B3/00
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