| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a single crystal thin film substrate which is used as a substrate for manufacturing a semiconductor element such as a light emitting element excelling in luminous efficiency, and which comprises as main components gallium nitride, indium nitride, and aluminum nitride. <P>SOLUTION: A highly crystalline single crystal thin film comprising as the main components one or more sorts selected from among gallium nitride, indium nitride and aluminum nitride is formed by using a sintered compact composed mainly of a ceramic material, especially a translucent sintered compact. An electronic element and an electronic component are manufactured using a bonded body of the single crystal thin film and the sintered compact. <P>COPYRIGHT: (C)2007,JPO&INPIT |
