| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor device capable of attaining a firethrough penetrating technique for forming electrodes that can considerably reduce the contact resistance to a semiconductor substrate even when a silicon nitride film is employed, the application of the technique to which has been difficult. <P>SOLUTION: The method includes the steps of: forming a junction to the semiconductor substrate; forming an insulation film at least one layer of which includes the silicon nitride film on at least the surface of the semiconductor substrate; providing a metallic paste material including glass with a property of melting the insulation film through heating on the insulation film and baking the material; and dipping the semiconductor substrate to an etching liquid with a property of solving the glass component. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
