| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent peeling in a peripheral edge portion and secure high moisture resistance while suppressing increase in a chip area, and to provide a method for manufacturing the semiconductor device, and a phase shift mask usable in manufacturing the semiconductor device. <P>SOLUTION: A main wall 2 is provided to surround an integrated circuit part 1. A sub-wall 3 is laid between each corner of the main wall and the integrated circuit part. Portions of the sub-wall orthogonal to each other are extended parallel to the respective portions of the main wall orthogonal to each other. A bent portion in the sub-wall is located nearest to a bent portion of the main wall. Even when stress is concentrated by heat treatment or the like, the stress is dispersed into the main wall and the sub-wall, and therefore, interlayer peeling or cracks are hardly induced. Even when cracks or the like are generated in the corner, external water hardly reaches the integrated circuit part as the main wall and the sub-wall are coupled to each other, and therefore, this ensures extremely high moisture resistance. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
