| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a nonvolatile semiconductor memory in which highly reliable high integration is attained by suppressing variation in coupling ratio among cells. SOLUTION: The method for manufacturing a nonvolatile semiconductor memory comprises a step for forming a first insulating film, a first silicon film, and a second insulating film sequentially on a semiconductor substrate, a step for forming a trench by sequentially removing the second insulating film, the first silicon film, the first insulating film in a partial region on the substrate and a part of the semiconductor substrate, a step for forming a third insulating film on the entire surface of the semiconductor substrate including the interior of a trench (or to fill the interior of the trench), a step for removing a part of the third insulating film to expose the second insulating film, a step for removing the second insulating film to expose the first silicon film, a step for forming a second silicon film selectively on the first silicon film, and a step for removing a part of the second silicon film to planarize it. COPYRIGHT: (C)2007,JPO&INPIT
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