| 摘要 |
A semiconductor memory device has a memory cell array in which a plurality of nonvolatile memory cells are arranged. The memory device also has word lines, bit lines connected with the memory cells by a virtual grounding scheme, a row decoder, shift registers, a write voltage control circuit for controlling voltages to be applied to bit lines, and a write voltage applying circuit for applying voltages to the bit lines. The write voltage control circuit controls the write voltage applying circuit such that when writing data 1 to a memory cell, different voltages V 0 and VP are applied to two bit lines associated with the memory cell, while a same voltage V 0 or VP is applied to the two bit lines when writing data 0 to the memory cell.
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