发明名称 Method of exposure and attenuated type phase shift mask
摘要 A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase modulation area allowing a part of said light to pass through. The phase modulation amount of the amplitude and phase modulation area relative to the reference area of the attenuated type phase shift mask is {360°xn+(182° to 203°)} (n is an integer).
申请公布号 US2006240337(A1) 申请公布日期 2006.10.26
申请号 US20060399288 申请日期 2006.04.05
申请人 TANIGUCHI YUKIO 发明人 TANIGUCHI YUKIO
分类号 G03F1/32;G03F1/54;G06F17/50;H01L21/027 主分类号 G03F1/32
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