| 摘要 |
A method for fabricating a semiconductor device, which includes the steps of: removing an abnormal layer formed on a surface of a wiring substrate, the wiring substrate having a first interlayer insulating film formed on a semiconductor substrate, the first interlayer insulating film having a first recess in which a first wiring is formed via a first barrier layer; forming a first antidiffusion film and a second interlayer insulating film sequentially on the resulting substrate; forming a second recess in the second interlayer insulating film and the first antidiffusion film so as to expose the first wiring; forming a second barrier layer on the resulting substrate; forming a second wiring in the second recess, the second wiring being electrically connected to the first wiring; and forming a second antidiffusion film on the resulting substrate.
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