| 摘要 |
Method for manufacturing a semiconductor device, includes: forming a layer of dicobalt monosilicide (Co<SUB>2</SUB>Si) or of cobalt (Co) on a device-forming surface of a silicon substrate in a sputter apparatus, by utilizing a predetermined temperature profile; elevating a temperature of the silicon substrate to a predetermined temperature T 2, which is equal to or higher than 600° C., conducted after forming the layer of Co or Co<SUB>2</SUB>Si; and forming a layer of monocobalt monosilicide (CoSi) on the device-forming surface of the silicon substrate at a temperature equal to or higher than T 2, conducted after heating the silicon substrate to T 2, wherein, the silicon substrate is elevated to a temperature between a highest reachable temperature T 1 of the silicon substrate during forming the layer of Co or Co<SUB>2</SUB>Si and the temperature T 2 at a temperature ramp rate of equal to or higher than 50° C./sec.
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