SILICON SINGLE CRYSTAL GROWING METHOD, SILICON WAFER AND SOI SUBSTRATE USING SUCH SILICON WAFER

摘要

In a silicon single crystal growing method, a silicon single crystal is manufactured by CZ method, at a hydrogen partial pressure of 40Pa or more but not more than 400Pa, in an inert atmosphere in a growing apparatus, by growing a single crystal straight body section as a nondefective region where no grown-in defect exists. Therefore, a wafer wherein the entire plane is composed of the nondefective region having no grown-in defect and BMD is sufficiently and uniformly formed can be easily provided. Such wafer can be widely used since generation of characteristically nonconforming integrated circuits formed on the wafer can be greatly reduced and that the wafer can contribute to improvement of the manufacturing yield as a substrate meeting the demands of circuit microminiaturization and density increase.