FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES
摘要
<p>A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.</p>
申请公布号
WO2006113621(A2)
申请公布日期
2006.10.26
申请号
WO2006US14407
申请日期
2006.04.14
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.;VISINTIN, PAMELA M.;KORZENSKI, MICHAEL B.;BAUM, THOMAS H.
发明人
VISINTIN, PAMELA M.;KORZENSKI, MICHAEL B.;BAUM, THOMAS H.