| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit in which a plurality of circuits whose demanded values for circuit working speed and leakage current values are different are integrated on the same chip, and to provide a method of manufacturing it. SOLUTION: The semiconductor integrated circuit includes a low-speed circuit 120 arranged on a rectangular low-seed circuit region 12 and configured by a low-speed transistor which makes a first diffusion region of a source extension region and a drain extension region, and a high-speed circuit 110 arranged on the rectangular high-speed circuit region 11 which adjoins the low-speed circuit region 12 and configured by a high-speed transistor which makes a second diffusion region with a thickness thinner than the first diffusion region of a source extension region and a drain extension region. COPYRIGHT: (C)2007,JPO&INPIT |
