| 摘要 |
PROBLEM TO BE SOLVED: To provide an isolation method causing no damage such as chipping. SOLUTION: The method for cutting a wafer comprises a resist film coating step for exposing an isolation region 11a by masking 4 a part corresponding to a device on the rear surface 11 of a wafer 1 having a surface 10 on which a plurality of devices are formed while being sectioned by isolation schedule lines 10a, and a step for forming isolation grooves by plasma etching the isolation schedule lines 10a from the rear surface 11 side and dividing the wafer into individual devices. In the resist film coating step, the isolation region 11a is exposed by performing masking to satisfy following relations; W<SB>1</SB>≤W<SB>2</SB>≤10W<SB>1</SB>and 0.1T≤W<SB>2</SB>, where W<SB>1</SB>is the maximum allowable width of isolation groove on the surface 10 side, W<SB>2</SB>is the width of the isolation region 11a, and T is the thickness of the wafer. In the etching step, the isolation schedule lines are etched from the isolation region 11a and isolation grooves narrower than the isolation region 11a are formed in the surface. COPYRIGHT: (C)2007,JPO&INPIT |
