| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor apparatus including a step at which the nitrogen concentration of nitrogen injected into a silicon oxide film and a segregation position are controlled. SOLUTION: The method for manufacturing the semiconductor apparatus 18 includes a silicon oxide film formation step 1 at which a silicon oxide film 12 is formed over a substrate 10, a step (silicon film formation step) 2 at which a silicon film 14 is formed over the silicon oxide film 12, and a step (thermal nitriding step) 3 at which the substrate 10 with the silicon film 14 formed in its uppermost surface is thermally nitrided to inject nitrogen into the silicon oxide film 12. COPYRIGHT: (C)2007,JPO&INPIT
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