| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming an oxide film wherein a high-quality oxide film can be formed and management is facilitated. SOLUTION: A vaporizer 21 provided externally to a pressure-resistant container 13 generates water vapor, which is in turn supplied into warmed and pressurized the pressure-resistant container 13. Therefore, the atmosphere around a silicon wafer A is constant throughout all the steps of an oxide film formation process, and an oxide film formed over the silicon wafer A is of high quality. Since water is used, the management of a quantity consumed and safe management are facilitated. COPYRIGHT: (C)2007,JPO&INPIT
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