发明名称 |
Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same |
摘要 |
A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
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申请公布号 |
US2006240608(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
US20060472177 |
申请日期 |
2006.06.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-BYUM;CHUNG SE-JIN;CHUNG UI-JIN |
分类号 |
H01L21/324;H01L21/84;B23K26/06;B23K26/067;B23K26/073;C30B29/06;C30B30/00;C30B35/00;H01L21/00;H01L21/20;H01L21/336;H01L29/04;H01L29/786 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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