发明名称 Non-volatile semiconductor device and method for automatically recovering erase failure in the device
摘要 A spare sector is in a blank state beforehand. Each time the erasing is carried out in practical use, the number of erase pulses is counted or the presence/absence of overcurrent flowing when the erase pulse is being applied is monitored. A regular sector having long-erase failure thus detected is automatically replaced with a spare sector. In this manner, the long-erase failure can be recovered without erasing the spare sector after automatic redundancy with the spare sector.
申请公布号 US2006239111(A1) 申请公布日期 2006.10.26
申请号 US20050110220 申请日期 2005.04.20
申请人 SHINGO MASAKI 发明人 SHINGO MASAKI
分类号 G11C8/00;G11C16/06;G11C16/10;G11C16/16;G11C16/34;G11C29/00 主分类号 G11C8/00
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