发明名称 |
ION IMPLANTATION DEVICE AND METHOD |
摘要 |
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form B<SUB>n</SUB>H<SUB>x</SUB> <SUP>+</SUP> |
申请公布号 |
WO2004003973(A3) |
申请公布日期 |
2006.10.26 |
申请号 |
WO2003US20197 |
申请日期 |
2003.06.26 |
申请人 |
SEMEQUIP INC.;HORSKY, THOMAS, N.;JACOBSON, DALE, C. |
发明人 |
HORSKY, THOMAS, N.;JACOBSON, DALE, C. |
分类号 |
H01J7/24;H01J27/20;H01J31/26;H01J37/08;H01J37/317;H01L21/00;H01L21/265;H01L21/336 |
主分类号 |
H01J7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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