| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element, along with its manufacturing method, capable of assuring transfer charge capacity at an output gate for improved transfer efficiency of the charge, without complication even after addition of a process for forming an element. SOLUTION: A photoelectric converter, a vertical charge transfer, a horizontal charge transfer, and an output which converts signal charges to electric signals for outputting are formed on a semiconductor substrate. In the horizontal charge transfer, a p-type semiconductor layer is formed in the semiconductor substrate, and an n-type semiconductor layer for transferring charges is formed in the shallow region of the p-type semiconductor layer. An impurity added region where a p-type impurity is added is formed at a part on the upper stream side in the direction of charge transfer within an output gate region which is arranged at the end on the output part side of the horizontal charge transfer part. COPYRIGHT: (C)2007,JPO&INPIT
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