| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor device and a manufacturing method thereof for enabling speeding up writing while suppressing deterioration in the rewritable number of times and for assuring higher reliability. SOLUTION: The nonvolatile semiconductor device 100 comprises a first capacitor 31 connected at one end thereof to a floating node 30, a detecting transistor 41 connected at a gate electrode thereof to the floating node 30, and a second capacitor 32 connected at one end thereof to the floating node 30 and also connected at the other end thereof to a drain of a detecting transistor 41. An upper first interlayer insulating film ILD1 of the second capacitor 32 is formed with the HDPCVD (High-Density-Plasma-Chemical-Vapor-Deposition) method. COPYRIGHT: (C)2007,JPO&INPIT
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