| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal substrate causing no crack and small warpage even using a different kind substrate therewith, and a group III nitride crystal substrate obtained by using the method. SOLUTION: This method for manufacturing the group III nitride crystal substrate comprises a step of growing a first group III nitride crystal layer 11 having a chemical composition of Al<SB>x</SB>Ga<SB>1-x</SB>N (0<x≤1) on a ground substrate 1 directly or through an intermediate layer 2, a step of growing a second group III nitride crystal layer 12 having a chemical composition of Al<SB>y</SB>Ga<SB>1-y</SB>N (0≤y<x) on the first group III nitride crystal layer 11 to 1 mm or more thickness without causing a crack and a step of forming a group III nitride crystal substrate 13 having a chemical composition of Al<SB>y</SB>Ga<SB>1-y</SB>N by processing the second group III nitride crystal layer 12. COPYRIGHT: (C)2007,JPO&INPIT
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