发明名称 |
Method for improving SOG process |
摘要 |
A method for forming a memory device includes providing a substrate, providing a plurality of features on the substrate, and forming a silicon-rich dielectric layer over the features. An inter-layer dielectric (ILD) or inter-metal dielectric (IMD) layer may be formed by a spin-on-glass (SOG) process on the silicon-rich dielectric layer, the silicon-rich dielectric layer preventing diffusion of a solvent used in the SOG process.
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申请公布号 |
US2006237802(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
US20050110862 |
申请日期 |
2005.04.21 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN LEE-JEN;SU CHIN-TA;LIU KUANG-WEN;LU CHIEN-HUNG;LUO SHING-ANN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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