| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of forming with high density a hole pattern even when sizes of a via plug and a contact plug are fine. <P>SOLUTION: The semiconductor device has a via hole communicating vertically with at least one of wirings formed at a predetermined interval on an insulating film. In the semiconductor device, the via hole 12 is formed on an overlapped portion of two hole patterns by a lithography technique where an ellipsoidal first hole pattern is exposed at a first time lithography position 13A such that one end of the pattern overlaps the wiring 1, and an ellipsoidal second hole pattern is exposed at a second lithography position 13B such that one end of the pattern overlaps the foregoing one end of the first hole pattern. <P>COPYRIGHT: (C)2007,JPO&INPIT |
