| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of shortening a turn-on time. SOLUTION: The semiconductor device 1 comprises an epitaxial layer 12, two base regions 13 embedded in the surface region of the layer 12, a source region 14 embedded in the regions 13, a drain region including at least regions 15, 16 except the regions 13 in the layer 12, and a gate electrode 21 provided with its end parts provided on the surface of the two base regions 13 so as to face each other through an insulating film 20. The drain region is formed with the depletion layer 40 from the two base regions 13 connected each other in the off-state at the part 15 positioning between the two base regions. COPYRIGHT: (C)2007,JPO&INPIT
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