| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a film can be embedded with favorable characteristics in a fine trench patterned by etching and thereby a finer embedding pattern can be attained. SOLUTION: A wiring trench 10 and a contact hole 11 on the bottom thereof are formed in material films 2-5 on a substrate 1 by pattern etching. A planarization film 21 is formed to fill the wiring trench 10 and the contact hole 11. An aspect ratio of the wiring trench 10 is decreased to such an extent as the widening portion (shoulder portion A) of an aperture diameter above the opening of the wiring trench 10 is removed by planalyzing surface layers of the planarization film 21 and the material films 2-5 from the surface side of the planarization film 21. After the planarization film 21 is removed from the interior of the wiring trench 10 and the contact hole 11, a copper wiring film 22 is formed to fill the interior thereof. COPYRIGHT: (C)2007,JPO&INPIT
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