METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for obtaining a desired fine processing shape. SOLUTION: The method sputters an amorphous carbon film covering a nitride film 103 and a resist pattern 104 to form an amorphous carbon film 106 on the side wall of the resist pattern 104, and patterns an oxide film 102 and the nitride film 103 on a silicon substrate 101 using the resist pattern 104 and the amorphous carbon film 106 as a mask. COPYRIGHT: (C)2007,JPO&INPIT