| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor having a structure having a high embedding property as a trench contact structure and inhibiting the occurrence of a problem caused by lengthening a source length. SOLUTION: In the field-effect transistor, a base layer 3 and a source layer 9 are formed in a cell constituted in a region surrounded by a trench type gate 7 formed to a semiconductor substrate. A trench contact 11 is formed extensively over the source layer 9 and the base layer 3. The gate 7 is formed in a polygonal shape such as a quadrilateral. The trench contact 11 has a thin linear shape to improve the embedding property. The trench contact 11 has a ring shape or a crossed shape to shorten the source length. COPYRIGHT: (C)2007,JPO&INPIT
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