| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can perform writing, reading, and erasing operations normally. SOLUTION: The nonvolatile semiconductor memory device comprises memory cell transistors MT<SB>11</SB>-MT<SB>1n</SB>which include source regions 421-42n of the same conductivity n<SP>-</SP>-type, drain regions 422-42(n+1) of the same conductivity type, and channel regions 411-41n of the same conductivity type. All of these are formed in contact with a buried insulation layer 2 in a semiconductor layer 3 formed on the buried insulation layer 2 on a support substrate 1. The thickness T<SB>SOI</SB>of the channel regions 411-41n is not less than 1 nm nor more than the gate length L of the memory cell transistor MT<SB>11</SB>-MT<SB>1n</SB>plus 6 nm. COPYRIGHT: (C)2007,JPO&INPIT
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