| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method surely removing a natural oxide film at a joining site by a pretreatment even to a mixed-loading device and generating no resistance rise. SOLUTION: The film forming method forming a metal-containing film on an Si-containing surface exposed from a body to be treated has a physical surface-treatment process physically treating the surface of the Si-containing section by a plasma using a high frequency, and a chemical surface-treatment process chemically treating the surface of the Si-containing section, to which a treatment by the plasma is carried out, by a reactive gas. The film forming method further has a film-forming process forming the metal-containing film on the Si-containing section, to which a chemical surface treatment is carried out. COPYRIGHT: (C)2007,JPO&INPIT
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