| 摘要 |
<p>A TFT substrate is provided to compensate for variation of capacitance by dividing a storage capacitor made of a MOS structure into two parts and by applying voltages of opposite polarities. A gate interconnection(120) is formed on an insulation substrate, including a gate line(122) and a gate electrode(124) connected to the gate line. A storage interconnection(130) is formed on the insulation substrate, including a storage line, a first storage electrode(134) and a second storage electrode(136). The gate interconnection and the storage interconnection are covered with a gate insulation layer. An active layer(150) is formed on the gate insulation layer, overlapping the gate electrode, the first storage electrode and the second storage electrode. A data interconnection(160) is formed on the active layer, overlapping the gate line crossing the gate line, a third storage electrode(164) overlapping the first storage electrode, and a fourth storage electrode overlapping the second storage electrode. The data interconnection is covered with a passivation layer. A pixel electrode(180) is formed on the passivation layer. The confronting first and third storage electrodes at both sides of the gate insulation layer and the active layer constitute a first capacitor. The confronting second and fourth storage electrodes at both sides of the gate insulation layer and the active layer constitute a second capacitor.</p> |
