| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic element such as a DRAM semiconductor memory with which proper capacitor characteristics or recording characteristics can be obtained even if the capacitor structure is very small, or a field effect transistor. <P>SOLUTION: In a method for manufacturing an electronic element in which a dielectric (130) and at least one capacitor (150) having at least one connection electrode (120, 140) are formed, particularly, a DRAM semiconductor memory or a field effect transistor, in order to create a capacitor to obtain optimum capacitor characteristics even if the capacitor structure is very small, the dielectric (130) or the connection electrode (120, 140) is formed such that the occurrence of transient polarization is suppressed or at least reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
