| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problems: in the crown-like capacitance used for the DRAM, the solution etching the insulating film of the outside wall periphery of a lower electrode after forming the lower electrode on an inner wall of a deep hole formed in a thick insulating film leaves the lower electrode in destruction with the surface tension of the solution or an unexpected etching caused by the solution penetration to cause a pair-bit-defect. <P>SOLUTION: A silicon nitride film having a thickness of at least not less than three times of that of the lower electrode is provided on the interlayer insulating film with a plug formed, after patterning the silicon nitride film in a line shape in some cases, the deep hole is formed by depositing the thick insulating film. After that, by laterally retreating the side wall of the insulating film in the hole, the lower electrode is formed with a part of the surface of the silicon nitride film exposed and a stand formed. The lower electrode formed jutting out the surface of the silicon nitride film improves a mechanical strength to prevent the destruction. <P>COPYRIGHT: (C)2007,JPO&INPIT |
