| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor device having a reliable capacitor in which etching damage to the capacitance insulating film of the capacitor is suppressed, and there is a little leakage current. <P>SOLUTION: A plate electrode 113 is formed on the semiconductor substrate 100, and a capacitive insulating film 115 and the protective insulating film 116 are laminated on the whole surface including the upper surface of the cap insulating film 112 provided on the plate electrode 113 and the side (the interior side of a through-hole 114) of the plate electrode 113. Then, anisotropic etching is performed, and the capacitive insulating film 115 and the protective insulating film 116 are made to remain on the side of the plate electrode 113. Then, the protective insulating film 116 is removed, and a storage electrode is formed on the capacitive insulating film 115. <P>COPYRIGHT: (C)2007,JPO&INPIT |
