| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain high-accuracy parallel light to irradiate a substrate through a photomask. <P>SOLUTION: The exposure light source U comprises a semiconductor laser 1 and an optical system 7, wherein the optical system 7 includes a first lens group 3, an optical polygonal column 4 and a second lens group 5. Light 2 emitted from the semiconductor laser 1 is converged by the first lens group 3 onto the entrance face of the optical polygonal column 4. The light whose luminance is homogenized by the optical polygonal column 4 is converted into parallel light 6 by the second lens group 5 to irradiate the substrate 11 through a photomask 8. <P>COPYRIGHT: (C)2007,JPO&INPIT |
