| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS field effect semiconductor device of high performance using a metal gate electrode. SOLUTION: An n-type gate electrode and a p-type gate electrode are composed of the same metal, and its N concentration is made different between the n-type gate electrode and the p-type gate electrode. Thus, a high-performance CMOS field effect semiconductor device having the n-type gate electrode and the p-type gate electrode with a prescribed work function difference is provided. Also, by forming a low resistance layer on a layer having a different N concentration composed of the same metal, the resistance of the n-type gate electrode and the p-type gate electrode is decreased while controlling a work function of them, and the CMOS field effect semiconductor device of further high performance is provided. COPYRIGHT: (C)2007,JPO&INPIT
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