| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a flash memory device improving a margin in a photo process, preventing defects in pattern, and preventing defects such as photo mask collapse by decreasing aspect ratio of photo mask. SOLUTION: There is provided the manufacturing method of the flash memory device which includes steps of: forming an anti-reflection film and an etching suspension film on a substrate on which a predetermined lower pattern is formed; forming an insulating film on the anti-reflection film and the etching suspension film; forming a photoresist on the insulating film; patterning the photoresist; and forming a trench by etching the insulating film, anti-reflection film, and etching suspension film with the patterned photoresist as the masks. COPYRIGHT: (C)2007,JPO&INPIT
|
