| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic capacitive sensor which has a high airtight property of a draw-out wiring, is a small size, and enhances a reliability. SOLUTION: The electrostatic capacitance type sensor is provided with a glass substrate 8 for a fixed electrode 9 to be formed and a semiconductor substrate for a moving electrode 6a to be formed and conducts the draw-out of the wiring from each electrode through a through-hole 11a provided in the glass substrate 8. In the sensor, an SOI wafer is used having an upper side Si substrate 2 and a lower side Si substrate 4 connected to the semiconductor substrate through an insulating layer 3, an island-shaped isolation 15 isolated from the Si substrate 2 electrically is formed on the upper side Si substrate 2, the through-hole 11a of the glass substrate 8 is enclosed by anode-joining the semiconductor substrate and the glass substrate 8, and an electric connection of the island-shaped isolation portion 15 and the wiring of each electrode is simultaneously conducted. The draw-out wiring of the electrodes is taken out while keeping the airtight property. COPYRIGHT: (C)2007,JPO&INPIT
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