| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory wherein the high speed collective erasure of memory signals can be obtained in an NAND-type flash memory having SOI structure. SOLUTION: This nonvolatile semiconductor memory comprises a plurality of memory cell transistors MT<SB>11</SB>-MT<SB>1n</SB>which are formed with channel regions 411-41n of a first conductivity type contiguous to a buried insulating layer 2 and are arranged in the column direction, a first selective gate transistor STS1 formed with a channel region 42 of a second conductivity type which is adjacent to one end of the arrangement of the memory cell transistors MT<SB>11</SB>-MT<SB>1n</SB>and contiguous to the buried insulating layer 2, a source line contact region 46 of the second conductivity type which is electrically connected to the channel region 42 of the second conductivity type and has impurity density higher than that of the channel region 42, and a source line contact plug 18 which is electrically connected to a source region 43 of the first conductivity type in the first selective gate transistor STS1 and electrically connected to the source line contact region 46. COPYRIGHT: (C)2007,JPO&INPIT
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