| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which is as good in mobility as a Poly-Si electrode conventionally used, by forming at least a part of a gate electrode which is in contact with a gate insulating film with a film that contains hafnium and nitrogen, and making the composition ratio of nitrogen contained in the film adequate. SOLUTION: In the semiconductor apparatus 1 formed of a field effect transistor equipped with a gate electrode 15 formed on the semiconductor substrate 11 through the gate insulating film 14, a part of the gate electrode 15 coming into contact with the gate insulating film 14 is formed of a film containing hafnium and nitrogen, and the film contains, at least, nitrogen, and the compositional ratio of nitrogen to hafnium is 51% or below. COPYRIGHT: (C)2007,JPO&INPIT
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