| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat processing furnace reducing the film thickness variation of a film formed on a semiconductor substrate and suppressing the deviation of the flow of process gas. SOLUTION: A vertical furnace 11 is used so as to form a silicon oxide film in a wafer 12, and it comprises a reaction pipe 13, a boat 14, a gas feed opening 16, a gas exhaust opening 17, a first current plate 18, and a second current plate 19. Process gas 21 is introduced from the gas feed opening 16, and is exhausted by suction from the gas exhaust opening 17. The flow differences between the region near the gas exhaust opening 17 and the region distant therefrom are suppressed in the region of the lower side of the boat 14, owing to the second current plate 19 arranged between the boat 14 and the gas exhaust opening 17, with respect to the process gas 21 which is extended with the first current plate 18. Consequently, even if a wafer 12 is placed in the lower side of the boat 14, the uniformity in the surface of film thickness formed in the wafer 12 is improved. COPYRIGHT: (C)2007,JPO&INPIT
|
