| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method of a film containing a noble metal free from sidewall deposit by employing mixture gas of halogen gas and inert gas as etching gas and applying low frequency bias power to a film containing a noble metal under high vacuum high density plasma. SOLUTION: In the dry etching method, mixture gas of halogen gas and inert gas is employed as etching gas and low frequency bias power is applied to a film containing a noble metal under high vacuum high density plasma. COPYRIGHT: (C)2007,JPO&INPIT
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