| 摘要 |
PROBLEM TO BE SOLVED: To relax compression stress applied to a single-crystal silicon layer on an SOS substrate. SOLUTION: A semiconductor device comprises: a substrate 12 of a rigid body; a stress relaxation layer 14 formed by filling a recess 22 formed on a first main surface 12a of the substrate; and an element formation layer 16 formed on the substrate by covering the first main surface partially. The substrate is made of a material having a thermal coefficient of expansion that is larger than that of the stress relaxation layer and the element formation layer. A side 16b in the element formation layer is connected to an upper surface 14c of the stress relaxation layer in an electrically non-conductive state via an insulating stress transfer layer 18 formed on the upper surface. COPYRIGHT: (C)2007,JPO&INPIT
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