发明名称 |
High dense sintered body of aluminum nitride, method for preparing the same and member for manufacturing semiconductor using the sintered body |
摘要 |
The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.
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申请公布号 |
US2006240972(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
US20060405243 |
申请日期 |
2006.04.17 |
申请人 |
LEE MIN-WOO;AHN HYUNG S;LEE SUNG-MIN |
发明人 |
LEE MIN-WOO;AHN HYUNG S.;LEE SUNG-MIN |
分类号 |
C04B35/582 |
主分类号 |
C04B35/582 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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