| 摘要 |
In a method for manufacturing a MOS transistor, a MOS transistor isolation layer is formed within a semiconductor substrate to surround an area for forming the MOS transistor in the semiconductor substrate. Then, first impurities are introduced into the area of the semiconductor substrate to adjust a threshold voltage of the MOS transistor. Also, second impurities are introduced into only a part of a periphery of the above-mentioned area adjacent to the MOS transistor isolation layer above which a gate electrode of the MOS transistor will be formed.
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