| 摘要 |
A semiconductor laser improved in heat sinkability of portions in the vicinity of a light-emitting end face of a main body in order to prevent occurrence of COD is provided. A main body 150 having a light-emitting end face 150 a for emitting laser light is formed on a semiconductor substrate, n-type GaAs substrate. Thickness of a front end portion 112 a in the vicinity of the light-emitting end face 150 a of a plated metal layer 112 formed on the main body 150 is larger than thickness of a central portion 112 b of the plated metal layer 112 in a direction along a cavity.
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