Semiconductor device using solid phase epitaxy and method for fabricating the same

摘要

A semiconductor device includes an epitaxial layer using a solid phase epitaxy (SPE) process; a first metal layer on the epitaxial layer; a nitride-based barrier metal layer on the first metal layer; a second metal layer on the barrier metal layer; and a metal silicide layer formed between the epitaxial layer and the first metal layer after a post-annealing process.