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发明名称
Method for Forming Gate Spacer of MOS Transistor
摘要
申请公布号
KR100639031(B1)
申请公布日期
2006.10.26
申请号
KR20040115760
申请日期
2004.12.29
申请人
发明人
分类号
H01L21/336;H01L21/335
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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