| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an anti-reflection film for a semiconductor, the film having high light absorbability on the interface with a photoresist film and markedly decreasing the dimensional errors in an exposed photoresist film, and to provide a method for manufacturing a semiconductor that uses the anti-reflection film. <P>SOLUTION: The inorganic anti-reflection film comprises an inorganic material, prepared by dispersing carbon particles and has over 0.20 extinction coefficient for light at 250 nm wavelength, superior light-absorbing performance and low reflectance. A method for manufacturing a semiconductor having a pattern with high dimensional accuracy is carried out, by forming a pattern that uses the inorganic anti-reflection film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
